韩国存储芯片巨头SK海力士近日传出重大投资计划，据知情人士向媒体透露，该公司拟斥资约40亿美元在美国印第安纳州西拉斐特建设一座先进的芯片封装工厂，以扩大其高带宽内存（HBM）的生产能力，以满足英伟达(Nvidia)不断增长的需求。英伟达是全球领先的GPU制造商，尤其在高性能AI领域，其对HBM存储系统的需求日益攀升。
据了解，SK海力士目前是英伟达H100 HBM存储系统的唯一供应商，双方合作关系紧密。随着新一代HBM存储——HBM3E的全面量产，SK海力士已准备就绪，计划本月开始向英伟达交付首批产品。HBM3E的推出将进一步提升英伟达AI芯片的性能，巩固其在市场上的领先地位。
预计SK海力士的这座新工厂将于2028年启动运营，这标志着韩国芯片制造商在全球布局中的重要一步，同时也是对美国半导体产业的强有力投资。该举措不仅将增强SK海力士的供应链韧性，同时也将为美国本土创造就业机会，促进半导体产业的国际合作与发展。
英语如下：
News Title: “SK Hynix Invests $4 Billion in U.S. Factory to Boost HBM Memory Capacity for Nvidia’s Demand”
Keywords: SK Hynix, U.S. factory, HBM memory
News Content: South Korean memory chip giant SK Hynix is reportedly planning a significant investment, with sources透露 to the media that the company intends to spend around $4 billion to build an advanced chip packaging facility in West Lafayette, Indiana, USA. This move aims to expand its High-Bandwidth Memory (HBM) production capacity to cater to the growing needs of Nvidia, the world’s leading GPU manufacturer, particularly in high-performance AI applications.
It is understood that SK Hynix is currently the sole supplier of Nvidia’s H100 HBM memory system, maintaining a close partnership between the two companies. With the mass production of the next-generation HBM memory, HBM3E, SK Hynix is prepared to commence deliveries of the initial batch to Nvidia this month. The introduction of HBM3E will further enhance the performance of Nvidia’s AI chips, solidifying its market leadership position.
The new factory is expected to commence operations in 2028, marking a crucial step in SK Hynix’s global expansion strategy and a strong investment in the U.S. semiconductor industry. This initiative will not only strengthen SK Hynix’s supply chain resilience but also create job opportunities domestically in the U.S. and foster international cooperation and development within the semiconductor sector.
【来源】https://www.zhitongcaijing.com/content/detail/1092705.html
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