中新网北京3月15日电 (记者 孙自法)记者3月15日从中国科学院金属研究所获悉，该所沈阳材料科学国家研究中心胡卫进研究员与同事等合作，聚焦下一代信息存储技术——铁电隧道结存储器开展研究，提出新策略、取得新进展。
铁电隧道结存储器被认为是未来非易失性存储技术的重要发展方向，具有高密度、低功耗和快速开关等优点。然而，现有研究中存在的一些挑战限制了其实际应用，例如，如何提高存储器的存储密度和读写速度，以及如何降低其生产成本等。
胡卫进研究员团队通过深入研究，提出了一种新的材料设计和器件结构，有效解决了上述难题。他们利用了一种新型的铁电材料作为隧道结的绝缘层，并结合先进的纳米加工技术，成功制备了具有高存储密度和优异读写性能的铁电隧道结存储器。
该研究不仅为铁电隧道结存储器的商业化应用奠定了基础，也为其他相关领域，如柔性电子、传感器等，提供了新的思路和技术支持。
英文标题：Chinese Scientists Make Progress in Research on Ferroelectric Tunnel Junction Memory
英文关键词：Ferroelectric Tunnel Junction, Memory Storage, Advanced Materials
英文新闻内容：
BEIJING, March 15 (Xinhua) — Chinese scientists have made significant progress in the research on ferroelectric tunnel junction (FTJ) memory, which is seen as a key technology for next-generation information storage.
The team, led by Professor Hu Weijin from the National Center for Materials Science at the Institute of Metal Research, Chinese Academy of Sciences (CAS), has proposed a new strategy to overcome the challenges faced in the development of FTJ memory, including how to increase storage density, read/write speed, and reduce production costs.
The researchers have designed a new material and structure for the FTJ memory, which has been successfully fabricated into high-density and high-performance devices using advanced nanofabrication techniques.
This breakthrough not only lays the groundwork for the commercialization of FTJ memory but also provides new ideas and technical support for other fields such as flexible electronics and sensors.
【来源】http://www.chinanews.com/gn/2024/03-15/10181118.shtml
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