【标题】三星电子在美国硅谷开设新实验室，重点研发下一代3D DRAM内存
【导语】近日，全球知名科技企业三星电子宣布其在美國硅谷成立了一個新的 R&D 研究 laboratory，將专注于下一代3D DRAM芯片的開發。這個实验室將有助於三星在DRAM技術方面不斷取得進展，並幫助公司繼續引领全球的3D DRAM市場。
【正文】据了解，這家新成立的實驗室將位于美國硅谷的Device Solutions America（DSA）运营之下，負責監督三星在美國的半导体生產，並致力於開發新一代的DRAM產品。值得一提的是，這家和三星去年的 memory technology event上，三星電子宣布计划在下一代10纳米或更低的DRAM中引入新的3D结构，而不是現有的2D平面结构。該計劃旨在克服3D垂直结构缩小芯片面积的限制並提高性能，将一颗 chip 的容量增加100G以上。
去年9月，三星電子刚推出 industry’s first and highest capacity 32 Gb DDR5 DRAM chip，采用 12nm 级工艺打造，可生产出 1TB 的内存产品，從而巩固了三星在DRAM技术方面的领导地位。而此次在新硅谷成立的实验室，将助三星在3D DRAM领域进一步加大研发投入，推动3D DRAM技术的突破和创新。
据分析師預測，3D DRAM市场將在未來幾年中快速增長，到2028年可达1000亿美元。作為其主要竞争对手之一，三星正與其他主要記憶體芯片製造商進行激烈競爭，以領導這一增長中的市場。
三星電子在全球半導體產業中擁有著豐富的經驗和良好的聲譽。此前的 reporting 顯示，三星在全球DRAM市场份额中佔有約30%的份额，僅次於英特爾和海力士。隨著3D DRAM市场的持續擴大和三星在該領域的深入參與，我们有理由相信，三星的未來發展前景將更加廣闊。
【結語】總的來說，三星電子在硅谷開放新的 R&D 研究實驗室，將對公司的 DRAM 技術發展帶來積極影響。我們期待着在未来能夠看到更多 innovation from Samsung, and to see how its efforts will shape the future of DRAM technology.
英语如下：
Title: Samsung Electronics Opens New R&D Laboratory in Silicon Valley, Focusing on Next-Generation 3D DRAM Memory
Keywords: Samsung Electronics,Silicon Valley Laboratory,3D DRAM Research
Content: Recently, global tech giant Samsung Electronics announced that it has opened a new R&D research laboratory in Silicon Valley, focusing on the development of next-generation 3D DRAM chips. This laboratory will help Samsung不断推进DRAM技术的发展,and assist the company in continuing to lead the global 3D DRAM market.
According to sources familiar with the matter, the newly established laboratory will be under the jurisdiction of Device Solutions America (DSA), which is responsible for overseeing Samsung’s semiconductor production in the United States and working on developing next-generation DRAM products. Notably, at last year’s memory technology event, Samsung Electronics announced plans to introduce new 3D structures in next-generation 10 nanometers or lower DRAM, rather than the existing 2D flat plane structure. The plan aims to overcome the limitations of the 3D vertical structure in reducing chip area and improve performance, increasing the capacity of a chip by more than 100G.
In September of last year, Samsung Electronics launched the world’s first and highest capacity 32 Gb DDR5 DRAM chip, built with 12nm process technology and able to produce 1TB of memory products, thus solidifying Samsung’s leadership position in DRAM technology. The newly established laboratory in Silicon Valley will help Samsung increase its investment in 3D DRAM research and development, promoting breakthroughs and innovations in 3D DRAM technology.
Analysts predict that the 3D DRAM market will grow rapidly in the coming years, reaching $100 billion by 2028. As one of its main competitors, Samsung is competing with other major memory chip manufacturers to lead this growing market.
Samsung Electronics has extensive experience and a good reputation in the global semiconductor industry. Reporting shows that it holds about 30% of the global DRAM market share, second only to Intel and Hynix. With the continuous expansion of the 3D DRAM market and Samsung’s deep involvement in this field, we have reason to believe that Samsung’s future development prospects will become even brighter.
Conclusion: In summary, opening a new R&D research laboratory in Silicon Valley will have a positive impact on Samsung’s DRAM technology development. We look forward to seeing more innovation from Samsung in the future and how its efforts will shape the future of DRAM technology.
【来源】https://www.ithome.com/0/747/680.htm
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