据韩媒 ETNews 报道，三星和 SK 海力士都计划 2024 年增加半导体设备投资。三星计划投资 27 万亿韩元，比 2023 年投资预算增加 25%；而 SK 海力士计划投资 5.3 万亿韩元，比今年的投资额增长 100%。报道中指出，三星和 SK 海力士在增加半导体设备投资之外，还提高了 2024 年的产能目标。三星将 DRAM 和 NAND 闪存的产量提高 24%，而 SK 海力士的目标是将 DRAM 产能提高到 2022 年年底水平。
业界普遍认为，未来一些与 AI 相关的应用将需要大容量内存支持。例如，明年全球智能手机出货量预计将增长 3%，预计将促进高价值内存市场需求的扩大。集邦咨询也指出，近期有关内存厂商扩大投资、提升产能的消息，主要是受 HBM 市场需求增长的推动，而非所有产品的产能扩张。
新闻翻译：
According to a report by ETNews, Samsung and SK Hynix plan to increase their semiconductor equipment investments in 2024. Samsung plans to invest 2.7 trillion Korean won, a 25% increase from its 2023 investment budget, while SK Hynix plans to invest 5.3 trillion Korean won, a 100% increase from its investment this year. The report notes that Samsung and SK Hynix have also increased their production targets for 2024. Samsung aims to increase DRAM and NAND flash memory production by 24%, while SK Hynix aims to reach the same level of DRAM production by the end of 2022.
Industry experts普遍认为，未来一些与 AI 相关的应用将需要大容量内存支持。例如，明年全球智能手机出货量预计将增长 3%,促进高价值内存市场需求的扩大。集邦咨询也指出，近期有关内存厂商扩大投资、提升产能的消息，主要是受 HBM 市场需求增长的推动，而非所有产品的产能扩张。
Translation:
According to a report by ETNews, Samsung and SK Hynix plan to increase their semiconductor equipment investments in 2024. Samsung plans to invest 2.7 trillion Korean won, a 25% increase from its 2023 investment budget, while SK Hynix plans to invest 5.3 trillion Korean won, a 100% increase from its investment this year. The report notes that Samsung and SK Hynix have also increased their production targets for 2024. Samsung aims to increase DRAM and NAND flash memory production by 24%, while SK Hynix aims to reach the same level of DRAM production by the end of 2022.
Industry experts widely believe that some AI-related applications will require large-capacity memory support in the future. For example, according to forecasts, global smartphone shipments are expected to grow by 3% next year, which is likely to drive demand for high-value memory.集邦咨询指出，近期有关内存厂商扩大投资、提升产能的消息，主要是受 HBM 市场需求增长的推动，而非所有产品的产能扩张。
【来源】https://www.ithome.com/0/740/626.htm
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