据韩媒Bridge Economy报道，全球半导体行业的两大巨头三星电子和AMD公司近日签署了一项总值高达4万亿韩元（约合210.8亿元人民币）的HBM3E 12H内存供货合同。此举不仅凸显了双方在高端半导体领域的紧密合作，也预示着双方在人工智能（AI）领域的加速发展。
据悉，根据该协议，AMD将采购三星的HBM3E 12H内存，而作为交换，三星则会采购AMD的AI加速卡。尽管具体的交换数量目前尚不清楚，但这一合作模式无疑将加强双方在技术上的互补性，推动双方在各自领域的技术创新和市场拓展。
值得一提的是，三星日前已经宣布将于今年上半年开始量产HBM3E 12H内存，而AMD也预计将在今年下半年开始量产相关的AI加速卡。这表明，双方的合作不仅停留在纸面上，更是有了实质性的生产计划和时间表。
HBM（High Bandwidth Memory）是一种高带宽、低延迟的内存技术，特别适合用于高性能计算和图形处理等领域。HBM3E作为其最新的版本，具有更高的带宽和存储密度，能够为AI加速卡等高性能设备提供更强大的数据处理能力。
此次三星与AMD的合作，不仅有助于提升双方在半导体市场的竞争力，也将进一步推动AI技术的发展和应用。在当前全球半导体产业竞争日益激烈的背景下，双方的合作无疑为行业树立了一个新的标杆，也展示了半导体行业合作的巨大潜力。
未来，随着HBM3E 12H内存和AMD AI加速卡的量产上市，预计将为数据中心、人工智能、高性能计算等领域带来更高效能和更高性能的解决方案。而三星与AMD的深度合作，也将成为推动全球半导体产业创新与发展的重要力量。
英语如下：
Title: Samsung Signs 4 Trillion韩元 HBM3E Memory Supply Agreement with AMD
Keywords: Samsung AMD Collaboration, HBM3E Supply, AI Acceleration Card Swap
News Content: ### Samsung Signs 4 Trillion韩元 HBM3E Memory Supply Agreement with AMD to Boost AI Acceleration Card Development
According to South Korean media Bridge Economy, two giants in the global semiconductor industry, Samsung Electronics and AMD, have recently signed a supply contract for HBM3E 12H memory worth up to 4 trillion韩元 (approximately 210.8 billion Chinese yuan). This move not only highlights the close collaboration between both parties in the high-end semiconductor field but also predicts accelerated development in the artificial intelligence (AI) sector.
Under this agreement, AMD will purchase Samsung’s HBM3E 12H memory, and in return, Samsung will purchase AMD’s AI acceleration cards. While the exact amount of the swap is currently unclear, this cooperative model无疑 will strengthen the complementarity of both parties in technology, promoting innovation and market expansion in their respective fields.
It is worth noting that Samsung recently announced that it will begin mass production of HBM3E 12H memory in the first half of this year, and AMD is also expected to start mass production of related AI acceleration cards in the second half of this year. This indicates that the collaboration between the two is not just on paper but also has a tangible production plan and timeline.
HBM (High Bandwidth Memory) is a type of memory technology that features high bandwidth and low latency, making it particularly suitable for high-performance computing and graphics processing applications. HBM3E, the latest version, has higher bandwidth and storage density, providing AI acceleration cards and other high-performance devices with more powerful data processing capabilities.
This collaboration between Samsung and AMD will not only enhance the competitiveness of both parties in the semiconductor market but also further promote the development and application of AI technology. In the current highly competitive global semiconductor industry, the partnership between the two无疑 sets a new benchmark for the industry and demonstrates the immense potential of semiconductor industry collaboration.
In the future, with the mass production and market launch of HBM3E 12H memory and AMD AI acceleration cards, it is expected to bring more efficient and high-performance solutions to data centers, artificial intelligence, high-performance computing, and other fields. The deep collaboration between Samsung and AMD will also become an important force driving global semiconductor industry innovation and development.
【来源】https://www.ithome.com/0/763/856.htm
Views: 2