韩国芯片制造商SK海力士正加大投资力度，计划将HBM（高带宽内存）的产能增加一倍以上，以满足高性能AI产品需求的激增。据悉，该公司将通过硅通孔（TSV）相关的设施投资，比2023年增加一倍以上，力求实现产能翻倍。SK海力士的目标是在2024年上半年开始生产第五代高带宽内存产品HBM3E。
HBM是一种堆叠内存技术，通过硅通孔（TSV）实现三维堆叠，极大地提高了内存带宽和密度，降低了延迟，非常适合于高性能计算和AI应用。随着AI技术的快速发展，对高性能内存的需求日益增长，HBM内存因卓越的性能成为AI领域的热门选择。
此次SK海力士的产能扩张和产品升级，无疑将进一步巩固其在高性能内存市场的地位，同时为AI领域的持续发展提供强有力的硬件支持。面对激烈的市场竞争，SK海力士的这一战略布局显示出其对AI市场前景的坚定信心。
英文标题：SK Hynix Bets on AI Market, Set to Double HBM Capacity
英文关键词：SK Hynix, HBM, AI
英文新闻内容：
South Korean chipmaker SK Hynix is stepping up its investment to nearly double the production capacity of High Bandwidth Memory (HBM), in response to the surge in demand for high-performance AI products. The company aims to achieve a doubling of production capacity through increased investment in facilities related to Through-Silicon Vias (TSV), with the goal of starting mass production of its fifth-generation HBM product, HBM3E, in the first half of 2024.
HBM is a stacked memory technology that achieves 3D stacking through TSVs, significantly increasing memory bandwidth and density while reducing latency, making it well-suited for high-performance computing and AI applications. With the rapid development of AI technology, the demand for high-performance memory is growing, making HBM memory a popular choice in the AI field.
SK Hynix’s expansion of capacity and upgrade of products will further solidify its position in the high-performance memory market and provide strong hardware support for the continued development of the AI sector. In the face of fierce market competition, this strategic move by SK Hynix demonstrates its firm belief in the prospects of the AI market.
【来源】https://wallstreetcn.com/articles/3707318
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