全球内存芯片制造商SK海力士正加大投资力度，计划将HBM（高带宽内存）的产能增加一倍以上，以满足高性能AI产品需求的激增。这家韩国公司正致力于扩大其HBM生产设施，并已决定将2023年通过硅通孔（TSV）相关的设施投资增加一倍以上，力图实现产能的翻倍。
SK海力士的目标是在2024年上半年开始生产第五代高带宽内存产品HBM3E。HBM3E是专为高性能AI应用而设计的产品，能够提供更高的数据传输速度和更低的功耗，这对于处理大规模数据和复杂算法至关重要。
随着人工智能技术的迅速发展，对于高速、高效内存解决方案的需求日益增长。SK海力士的这一决策不仅展现了其对于AI市场的深刻洞察和战略布局，也反映了全球内存芯片行业对于未来市场的积极预期。
英文标题：SK Hynix Bets on AI Market, Doubling HBM Production
英文关键词：SK Hynix, HBM, AI
英文新闻内容：
Global memory chip manufacturer SK Hynix is stepping up its investment efforts by planning to more than double its HBM (High Bandwidth Memory) production capacity to meet the surge in demand for high-performance AI products. The South Korean company is致力于 expanding its HBM production facilities and has decided to more than double its investment in through-silicon via (TSV) related facilities in 2023, aiming to achieve a doubling of capacity.
SK Hynix aims to begin production of its fifth-generation high-bandwidth memory product, HBM3E, in the first half of 2024. HBM3E is designed specifically for high-performance AI applications, offering higher data transfer speeds and lower power consumption, which are crucial for handling large-scale data and complex algorithms.
With the rapid development of artificial intelligence technology, the demand for high-speed, efficient memory solutions is growing. This decision by SK Hynix not only demonstrates its deep insight and strategic positioning in the AI market but also reflects the positive expectations of the global memory chip industry for the future market.
【来源】https://wallstreetcn.com/articles/3707318
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