SK海力士近日宣布，为进一步提升在高性能AI产品领域的竞争力，计划将HBM（高带宽内存）产能增加一倍以上。为实现这一目标，公司决定加大对HBE生产设施的投入，并通过硅通孔（TSV）相关的设施投资，以满足市场需求。据华尔街见闻报道，SK海力士计划在2024年上半年开始生产第五代高带宽内存产品HBM3E。
随着AI技术的快速发展，对高性能内存的需求日益增长。SK海力士此次产能扩张，旨在满足这一市场需求，进一步巩固在全球半导体行业的领先地位。公司表示，将继续关注AI领域的发展趋势，积极布局相关技术，以适应行业变革。
Title: SK Hynix to Increase HBM Production Capacity for AI Applications
Keywords: SK Hynix, AI, HBM, Capacity Expansion
News Content:
SK Hynix recently announced that it plans to increase its high-bandwidth memory (HBM) production capacity by more than 100% to enhance its competitiveness in the high-performance AI product market. To achieve this goal, the company has decided to increase its investment in HBE production facilities and TSV-related facility investments, aiming to double its capacity by 2023. According to Wall Street Journal reports, SK Hynix plans to begin producing its fifth-generation HBM products, HBM3E, in the first half of 2024.
With the rapid development of AI technology, the demand for high-performance memory is growing. SK Hynix’s capacity expansion is aimed at meeting this market demand and further consolidating its leading position in the global semiconductor industry. The company said it will continue to pay attention to the development trend of the AI field and actively layout related technologies to adapt to the industry transformation.
【来源】https://wallstreetcn.com/articles/3707318
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