SK海力士，一家全球领先的半导体企业，近日宣布将加大对高性能AI产品领域的投入。为实现这一目标，公司计划将HBM（高带宽内存）产能增加一倍以上。此举将通过扩大HBE生产设施投资来实现，对通过硅通孔（TSV）相关的设施投资将比2023年增加一倍以上。SK海力士力求在2024年上半年开始生产第五代高带宽内存产品HBM3E，以满足高性能AI产品需求的不断增长。
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SK Hynix, a global leader in the semiconductor industry, recently announced plans to increase its investment in the high-performance AI product market. This will be achieved by expanding the production capacity of HBM (high-bandwidth memory) by more than 100%. To achieve this goal, the company plans to increase investment in HBE production facilities, with investments in TSV-related facilities doubling by 2023. SK Hynix aims to begin producing its fifth-generation high-bandwidth memory product HBM3E in the first half of 2024, meeting the growing demand for high-performance AI products.
【来源】https://wallstreetcn.com/articles/3707318
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