三星电子代工厂已经开始试生产第二代3nm级工艺SF3,该公司计划在未来六个月内将良率提高至60%以上。首个采用三星SF3工艺的芯片预计将会是专为可穿戴设备设计的应用处理器，计划用于今年晚些时候发布的Galaxy Watch 7等产品。同时，Chosun预计该公司还将为明年的Galaxy S25系列智能手机所搭载的Exynos 2500芯片使用这一节点。
据IT之家1月21日消息，三星电子代工厂已开始针对其第二代3nm级工艺SF3进行试生产。据报道，该公司计划在未来六个月内将良率提高至60%以上。消息人士称，三星正在测试SF3节点上制造的芯片的性能和可靠性；首个采用三星SF3工艺的芯片预计将会是专为可穿戴设备设计的应用处理器，计划用于今年晚些时候发布的Galaxy Watch 7等产品。同时，Chosun预计该公司还将为明年的Galaxy S25系列智能手机所搭载的Exynos 2500芯片使用这一节点。
三星此前表示，计划在2024年下半年开始大规模量产SF3芯片；2023-2024年将以3nm生产为主，即SF3 (3GAP)及其改进版本SF3P (3GAP+),而且该公司还计划于2025-2026年开始推出其2nm节点。据三星介绍，SF3节点可以在同一单元内实现不同的环绕栅(GAA)晶体管纳米片通道宽度，从而提供更高的设计灵活性。这也能够为芯片带来更低的功耗和更高的性能，并通过优化设计来增加晶体管密度。
台积电去年第三季度占据了全球晶圆代工市场57.9%的份额。三星电子以12.4%的份额位居第二，两家公司之间的差距超过40个百分点。
英语如下：
Title: Samsung’s Second-Generation 3nm Process SF3 In-Production, Aiming to ImproveYield to Over 60% Within Six Months
Keywords: Samsung, 3nm process, wearable devices
Samsung Electronics’ foundry has begun trial production of its second-generation 3nm process, SF3. The company plans to increase the yield to over 60% within six months. The first chip to be manufactured using Samsung’s SF3 process is expected to be an application processor specifically designed for wearable devices and is planned to be used in products like the Galaxy Watch 7, which is expected to be released later this year. At the same time, Chosun expects the Exynos 2500 chip that will power next year’s Galaxy S25 series of smartphones to also use this node.
According to ITHome on January 21st, Samsung Electronics’ foundry has started trial production of its second-generation 3nm process, SF3. It is reported that the company plans to increase the yield to over 60% within six months. Sources say that Samsung is testing the performance and reliability of chips manufactured on the SF3 node; the first chip to be manufactured using Samsung’s SF3 process is expected to be an application processor specifically designed for wearable devices and is planned to be used in products like the Galaxy Watch 7, which is expected to be released later this year. At the same time, Chosun expects the Exynos 2500 chip that will power next year’s Galaxy S25 series of smartphones to also use this node.
Samsung had previously stated that it plans to start mass production of SF3 chips in the second half of 2024; 2023-2024 will focus on 3nm production, namely SF3 (3GAP) and its improved version SF3P (3GAP+), and the company also plans to begin introducing its 2nm node in 2025-2026. According to Samsung, the SF3 node can achieve different channel widths of surrounding gate (GAA) transistor nanosheets in the same unit, providing higher design flexibility. This can also bring lower power consumption and higher performance to the chip and increase transistor density through optimization design.
TSMC captured 57.9% of the global wafer foundry market share in the third quarter of last year. Samsung Electronics ranked second with a 12.4% share, with a gap of over 40 percentage points between the two companies.
【来源】https://www.ithome.com/0/746/440.htm
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