韩国半导体巨头SK海力士近日宣布，计划将高带宽内存（HBM）的产能增加一倍以上，以满足人工智能（AI）领域不断增长的需求。这一举措是对其HBM生产设施投资的重大扩张，特别是在硅通孔（TSV）相关设施的投资，预计将比2023年的水平增加一倍以上。SK海力士的目标是在2024年上半年开始生产其第五代HBM产品——HBM3E，以确保在AI高性能产品市场中占据领先地位。
这一决策反映了SK海力士对AI技术未来发展的信心，同时也表明了公司在半导体领域的强大竞争力。随着AI技术的不断进步，对高性能内存的需求日益增长，SK海力士希望通过扩大产能来抓住这一市场机遇。
英文标题：SK Hynix Doubles HBM Capacity to Boost AI Development
英文关键词：SK Hynix, HBM, AI Applications
英文新闻内容：
SK Hynix, a leading South Korean semiconductor manufacturer, has recently announced its plans to double the production capacity of High Bandwidth Memory (HBM) in response to the growing demand from the artificial intelligence (AI) sector. This expansion includes a significant increase in investment for HBM production facilities, particularly those related to Through Silicon Via (TSV) technology, which is expected to more than double compared to 2023 levels. SK Hynix aims to begin production of its fifth-generation HBM product, HBM3E, by the first half of 2024, positioning itself as a leader in the market for high-performance AI products.
This decision demonstrates SK Hynix’s confidence in the future of AI technology and the company’s strong competitive edge in the semiconductor industry. As AI technology continues to advance, the demand for high-performance memory is escalating, and SK Hynix intends to seize this market opportunity by expanding its capacity.
【来源】https://wallstreetcn.com/articles/3707318
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