全球两大半导体巨头SK海力士与台积电于当地时间周五共同发布重大合作消息,双方已签署谅解备忘录,决定联手开发新一代高带宽内存(HBM)——HBM4芯片。这一合作标志着半导体行业在先进封装技术领域的又一重大突破。

根据公告,SK海力士与台积电将整合各自的HBM和逻辑层封装技术,共同致力于第六代HBM产品的研发。HBM4芯片作为当前HBM技术的升级版,预计将提供更强大的数据处理能力和更高的能效,以满足未来高性能计算、人工智能和数据中心等领域不断增长的需求。

双方预计,这款革命性的HBM4芯片将于2026年投入生产。这一时间表凸显了两家公司在应对市场挑战和技术创新上的决心与远见。通过这次合作,SK海力士和台积电旨在巩固其在全球半导体市场的领先地位,并推动行业标准的设定。

此次合作不仅将影响半导体行业的技术格局,同时也可能重塑全球数据中心和高性能计算的未来。双方的联合研发将进一步推动半导体技术的边界,为全球科技发展注入新的活力。

英语如下:

**News Title:** “SK Hynix and TSMC Join Forces to Launch Innovative HBM4 Chips in 2026”

**Keywords:** SK Hynix, TSMC, HBM4 Chips

**News Content:**

Title: SK Hynix and TSMC Team Up for HBM4 Chip Development, Aiming for Mass Production in 2026

In a significant collaboration, global semiconductor giants SK Hynix and TSMC jointly announced on Friday, local time, that they have signed a memorandum of understanding to jointly develop the next-generation High-Bandwidth Memory (HBM) – the HBM4 chip. This partnership marks another major breakthrough in advanced packaging technology within the semiconductor industry.

According to the press release, SK Hynix and TSMC will combine their respective HBM and logic layer packaging technologies to jointly work on the sixth generation of HBM products. The HBM4 chip, an upgrade from the current HBM technology, is expected to deliver enhanced data processing capabilities and higher energy efficiency, catering to the growing demands in future high-performance computing, artificial intelligence, and data center applications.

The revolutionary HBM4 chip is projected to enter production in 2026, showcasing the两家 companies’ commitment and foresight in tackling market challenges and driving technological innovation. Through this collaboration, SK Hynix and TSMC aim to solidify their leading positions in the global semiconductor market and influence industry standards.

This partnership not only reshapes the technological landscape of the semiconductor industry but also has the potential to redefine the future of global data centers and high-performance computing. The joint research and development efforts will push the boundaries of semiconductor technology, injecting new vitality into global technological advancement.

【来源】https://www.cls.cn/detail/1652041

Views: 2

发表回复

您的邮箱地址不会被公开。 必填项已用 * 标注